Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements.

We investigate current saturation at short channel lengths in graphene field-effect transistors (GFETs). Saturation is necessary to achieve low-output conductance required for device power gain. Dual-channel pulsed current-voltage measurements are performed to eliminate the significant effects of trapped charge in the gate dielectric, a problem common to all oxide-based dielectric films on grap...

An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors

Article history: Received 12 September 2012 Received in revised form 23 November 2012 Accepted 3 December 2012 Available online 14 February 2013 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.12.002 ⇑ Corresponding author. Tel.: +6

Field dependent transport properties in InAs nanowire field effect transistors.

We present detailed studies of the field dependent transport properties of InAs nanowire field-effect transistors. Transconductance dependence on both vertical and lateral fields is discussed. Velocity-field plots are constructed from a large set of output and transfer curves that show negative differential conductance behavior and marked mobility degradation at high injection fields. Two dimen...

Changes in major charge transport by molecular spatial orientation in graphene channel field effect transistors.

Changes in major charge transport of graphene channel transistors in terms of the spatial orientation of adsorbed functional molecules were demonstrated. In contrast to the horizontally (physically) bound molecules, the vertically (chemically) bound molecules did not change major charge carriers of graphene channels, revealing the molecular orientation-dependent doping effects.